| Autor: |
Dhara, Soumen, Niang, Kham M., Flewitt, Andrew J., Nathan, Arokia, Lynch, Stephen A. |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Nature Scientific Reports (2021) 11:19016 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1038/s41598-021-98339-4 |
| Popis: |
We report on a giant persistent photoconductivity (PPC) induced semiconductor-to-conductor like transition in zinc-tin-oxide (ZTO) photo-thinfilm transistors (TFT). The active ZTO channel layer was prepared by remote-plasma reactive sputtering and possesses an amorphous structure. Under subbandgap excitation of ZTO with UV light, the photocurrent reaches as high as ~10 -4 A (a photo-to-dark current ratio of ~10 7) and remains close to this high value after switching off the light. During this time, the ZTO TFT exhibits gigantic PPC with long-lasting recovery time, which leads the ZTO compound to undergo a semiconductor-to-conductor like transition. In the present case, the conductivity changes over six orders of magnitude, from ~10-7 to 0.92 {\Omega} -1cm-1. After UV exposure, the ZTO compound can potentially remain in the conducting state for up to a month. The underlying physics of the observed PPC effect is investigated by studying defects (deep-states and tail-states) by employing a discharge current analysis (DCA) technique. Findings from the DCA study reveal direct evidence for the involvement of sub-gap tail-states of the ZTO in the giant PPC, while deep-states contribute to mild PPC. |
| Databáze: |
arXiv |
| Externí odkaz: |
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