Engineering telecom single-photon emitters in silicon for scalable quantum photonics
| Autor: | Hollenbach, M., Berencén, Y., Kentsch, U., Helm, M., Astakhov, G. V. |
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| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Opt. Express 28, 26111 (2020) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1364/OE.397377 |
| Popis: | We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology. Comment: 8 pages, 5 figures |
| Databáze: | arXiv |
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