High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP
| Autor: | Okamoto, Yoshihiko, Saigusa, Kazushige, Wada, Taichi, Yamakawa, Youichi, Yamakage, Ai, Sasagawa, Takao, Katayama, Naoyuki, Takatsu, Hiroshi, Kageyama, Hiroshi, Takenaka, Koshi |
|---|---|
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Phys. Rev. B, 102, 115101(1-6) (2020) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.102.115101 |
| Popis: | We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K. Comment: 6 pages, 3 figures, accepted for publication in Phys. Rev. B |
| Databáze: | arXiv |
| Externí odkaz: |
|