In situ tuning of symmetry-breaking induced non-reciprocity in giant-Rashba semiconductor BiTeBr

Autor: Kocsis, Mátyás, Zheliuk, Oleksandr, Makk, Péter, Tóvári, Endre, Kun, Péter, Tereshchenko, Oleg Evgenevich, Kokh, Konstantin Aleksandrovich, Taniguchi, Takashi, Watanabe, Kenji, Ye, Justin, Csonka, Szabolcs
Rok vydání: 2020
Předmět:
Zdroj: Phys. Rev. Research 3, 033253 (2021)
Druh dokumentu: Working Paper
DOI: 10.1103/PhysRevResearch.3.033253
Popis: Non-reciprocal transport, where the left to right flowing current differs from the right to left flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a non-centrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density, however, in-situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hBN layer. Tuning the carrier density allows a more than \SI{400}{\percent} variation of the non-reciprocal response. Our study serves as a milestone on how a few-atomic-layer-thin van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.
Databáze: arXiv