| Autor: |
Geyer, Simon, Camenzind, Leon C., Czornomaz, Lukas, Deshpande, Veeresh, Fuhrer, Andreas, Warburton, Richard J., Zumbühl, Dominik M., Kuhlmann, Andreas V. |
| Rok vydání: |
2020 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/5.0036520 |
| Popis: |
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is dominated by spin-orbit interaction, and enable us to determine the effective hole $g$-factor $\simeq1.6$. From an avoided singlet-triplet crossing, occurring at high magnetic field, the spin-orbit coupling strength $\simeq0.27$meV is obtained, promising fast and all-electrical spin control. |
| Databáze: |
arXiv |
| Externí odkaz: |
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