Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS transistor by RMS noise analysis

Autor:	Bigoni, Stefano, Tagliaferri, Marco L. V., Tamascelli, Dario, Strangio, Sebastiano, Bez, Roberto, Organtini, Paolo, Ferrari, Giorgio, Prati, Enrico
Rok vydání:	2020
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
DOI:	10.35848/1882-0786/abc7cf
Popis:	We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS transimpedance amplifier is exploited to perform low-frequency noise characterization down to the single electron, single donor and single phonon regime simultaneously, not otherwise visible through standard stability diagrams. Single electron tunneling as well as phonon-mediated features emerges in rms-noise measurements. Phonons are emitted at high frequency by generation-recombination phenomena by the impurity atom. The phonon decay is correlated to a Lorentzian $1/f^2$ noise at low frequency. Comment: 5 pages, 3 figures, submitted to APL
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2007.06462 Zobrazit plný text záznamu View this record from Arxiv