| Autor: |
Jo, Seong Soon, Singh, Akshay, Yang, Liqiu, Tiwari, Subodh C., Hong, Sungwook, Krishnamoorthy, Aravind, Sales, Maria Gabriela, Oliver, Sean M., Fox, Joshua, Cavalero, Randal L., Snyder, David W., Vora, Patrick M., McDonnell, Stephen J., Vashishta, Priya, Kalia, Rajiv K., Nakano, Aiichiro, Jaramillo, Rafael |
| Rok vydání: |
2020 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1021/acs.nanolett.0c03263 |
| Popis: |
A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and proceeds by a mechanism of Zr-O bond switching, that collapses the van der Waals gaps, and is facilitated by progressive redox transitions of the chalcogen. The rate-limiting process is the formation and out-diffusion of SO$_2$. In contrast, MoS$_2$ basal surfaces are stable due to unfavorable oxygen adsorption. Our results provide insight and quantitative guidance for designing and processing semiconductor devices based on ZrS$_x$Se$_{2-x}$ and MoS$_2$, and identify the atomistic-scale mechanisms of bonding and phase transformations in layered materials with competing anions. |
| Databáze: |
arXiv |
| Externí odkaz: |
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