| Autor: |
Gadelha, Andreij C., Cadore, Alisson R., Watanabe, Kenji, Tanigushi, Takashi, de Paula, Ana M., Malard, Leandro M., Lacerda, Rodrigo G., Campos, Leonardo C. |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
2D Mater. 6 025036 (2019) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1088/2053-1583/ab0af1 |
| Popis: |
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodoping promotes changes on the conductance of MoS$_2$ leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50 % of the information for tens of years. Furthermore, we show that the photodoping is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodoping, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS$_2$ phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures. |
| Databáze: |
arXiv |
| Externí odkaz: |
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