| Autor: |
Wuetz, Brian Paquelet, Losert, Merritt P., Tosato, Alberto, Lodari, Mario, Bavdaz, Peter L., Stehouwer, Lucas, Amin, Payam, Clarke, James S., Coppersmith, Susan N., Sammak, Amir, Veldhorst, Menno, Friesen, Mark, Scappucci, Giordano |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Phys. Rev. Lett. 125, 186801 (2020) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevLett.125.186801 |
| Popis: |
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $\mu$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces. |
| Databáze: |
arXiv |
| Externí odkaz: |
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