| Autor: |
Li, Yue, Chen, Chen, Li, Wei, Mao, Xiaoyu, Liu, Heng, Xiang, Jianyong, Nie, Anmin, Liu, Zhongyuan, Zhu, Wenguang, Zeng, Hualing |
| Rok vydání: |
2020 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, we report a new approach to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In2Se3 and MoS2, we validate an in-plane voltage gated coplanar field-effect transistor (CP-FET) with distinguished and retentive on/off ratio. Our results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating two-dimensional (2D) ferroelectric into novel nanoelectronic devices with broad applications. |
| Databáze: |
arXiv |
| Externí odkaz: |
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