Gate-controllable electronic trap detection in dielectrics

Autor:	Mondal1, Sandip, Paul, Tathagata, Ghosh, Arindam, Venkataraman, V.
Rok vydání:	2020
Předmět:	Physics - Applied Physics Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
Popis:	Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than 10 micro-seconds due to injection or ejection of electrons through the metal gate. Using this method, an electronic trap energy distribution was measured in the HfO2 dielectric film and it confirms a maximum number of traps (Delta_NT) of 1.7x1012 cm-2 corresponding to an energy level (Delta_EIL) of 0.45 eV above silicon conduction band (Si-ECB). In comparison, ZrO2-based MIS devices showed a broader distribution of electronic traps throughout the band gap. However, HfO2 contained more than 60% traps in deep level compared to 50% in ZrO2, which establishes the effects of material variation. Comment: Electronic traps, metal insulator semiconductor (MIS), energy level (EIL), silicon conduction band (Si ECB)
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2003.13939 Zobrazit plný text záznamu View this record from Arxiv