Complementary lateral-spin-orbit building blocks for programmable logic and in-memory computing
| Autor: | Zhang, Nan, Cao, Yi, Li, Yucai, Rushforth, Andrew W., Ji, Yang, Zheng, Houzhi, Wang, Kaiyou |
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| Rok vydání: | 2020 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1002/aelm.202000296 |
| Popis: | Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful logic operations, including the material implication (IMP) gate, were also demonstrated by regarding the magnetization state as a logic input. Our complementary LSOT building blocks provide an applicable way towards future efficient spin logics and in-memory computing architectures. Comment: 22 pages, 4 figures |
| Databáze: | arXiv |
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