| Autor: |
Kantner, Markus, Koprucki, Thomas |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Finite Volumes for Complex Applications IX, pp. 173-182 (2020) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1007/978-3-030-43651-3_14 |
| Popis: |
Electro-thermal transport phenomena in semiconductors are described by the non-isothermal drift-diffusion system. The equations take a remarkably simple form when assuming the Kelvin formula for the thermopower. We present a novel, non-isothermal generalization of the Scharfetter-Gummel finite volume discretization for degenerate semiconductors obeying Fermi-Dirac statistics, which preserves numerous structural properties of the continuous model on the discrete level. The approach is demonstrated by 2D simulations of a heterojunction bipolar transistor. |
| Databáze: |
arXiv |
| Externí odkaz: |
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