Field emission in ultrathin PdSe2 back-gated transistors

Autor:	Di Bartolomeo, A., Pelella, A., Urban, F., Grillo, A., Iemmo, L., Passacantando, M., Liu, X., Giubileo, F.
Rok vydání:	2020
Předmět:	Physics - Applied Physics Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	Adv. Electron. Mater. 2020, 2000094
Druh dokumentu:	Working Paper
DOI:	10.1002/aelm.202000094
Popis:	We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material. Comment: 12 pages, 4 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/2002.05454 Zobrazit plný text záznamu View this record from Arxiv