Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors
| Autor: | Huber, M., Pozzovivo, G., Daumiller, I., Curatola, G., Knuuttila, L., Silvestri, M., Bonanni, A., Lundskog, A. |
|---|---|
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Phys. Status Solidi A 213, 1122 (2016) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1002/pssa.201532752 |
| Popis: | The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three different sets of samples have been analyzed by means of dynamic instabilities in the threshold voltage (V$_{\mathrm{th}}$ shift). Secondary ion mass spectroscopy, steady-state photoluminescence (PL) measurements have been performed in conjunction with electrical characterization. The device dynamic performance is found to be significantly dependent on both the C concentration close to the channel as well as on the distance between the channel and the higher doped C region. Additionally, we note that experiments studying trapping should avoid large variations in the sheet carrier density (N$_{\mathrm{s}}$). This change in the N$_{\mathrm{s}}$ itself has a significant impact on the V$_{\mathrm{th}}$ shift. This experimental trends are also supported by a basic model and device simulation. Finally, the relationship between the yellow luminescence (YL) and the band edge (BE) ratio and the V$_{\mathrm{th}}$ shift is investigated. As long as the basic layer structure is not changed, the YL/BE ratio obtained from steady-state PL is demonstrated to be a valid method in predicting trap concentrations in the GaN channel layer. Comment: 7 pages, 9 figures |
| Databáze: | arXiv |
| Externí odkaz: |
|