Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond

Autor: Breeze, B G, Meara, C J, Wu, X X, Michaels, C P, Gupta, R, Diggle, P L, Dale, M W, Cann, B L, Ardon, T, D'Haenens-Johansson, U F S, Friel, I, Rayson, M J, Briddon, P R, Goss, J P, Newton, M E, Green, B L
Rok vydání: 2020
Předmět:
Zdroj: Phys. Rev. B 101, 184115 (2020)
Druh dokumentu: Working Paper
DOI: 10.1103/PhysRevB.101.184115
Popis: We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy complex decorated with a nearest-neighbor nitrogen, SiVN, supported by theoretical calculations. Samples containing silicon and nitrogen are shown to be heavily photochromic, with the dominant visible changes due to the loss of SiV0/- and gain in the optically-inactive SiV2-.
Databáze: arXiv