Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2$
| Autor: | Sayers, C. J., Farrar, L. S., Bending, S. J., Cattelan, M., Jones, A. J. H., Fox, N. A., Kociok-Köhn, G., Koshmak, K., Laverock, J., Pasquali, L., Da Como, E. |
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| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Phys. Rev. Materials 4, 025002 (2020) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevMaterials.4.025002 |
| Popis: | We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy (XPS), we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultra-high purity 1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ = (112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and the importance of controlling the crystal growth conditions of strongly-correlated transition metal dichalcogenides. Comment: 14 pages, 11 figures |
| Databáze: | arXiv |
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