| Autor: |
Pavlova, T. V., Shevlyuga, V. M., Andryushechkin, B. V., Zhidomirov, G. M., Eltsov, K. N. |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Applied Surface Science, 509 (2020) 145235 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1016/j.apsusc.2019.145235 |
| Popis: |
We report the realization of STM-based lithography with silicon layers removal on the chlorinated Si(100)-2x1 surface at 77 K. In contrast to other STM lithography studies, we were able to remove locally both chlorine and silicon atoms. Most of the etched pits have a lateral size of 10-20 A and a depth of 1-5 A. In the pits in which the STM image with atomic resolution is obtained, the bottom is mainly covered with chlorine. Some pits contain chlorine vacancies. Mechanisms of STM-induced removal of silicon and chlorine atoms on Si(100)-2x1-Cl are discussed and compared with the well-studied case of STM-induced hydrogen desorption on Si(100)-2x1-H. The results open up new possibilities of the three-dimensional local etching with STM lithography. |
| Databáze: |
arXiv |
| Externí odkaz: |
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