| Autor: |
Belas, E., Grill, R., Pipek, J., Praus, P., Bok, J., Musiienko, A., Moravec, P., Tolbanov, O., Tyazhev, A., Zarubin, A. |
| Rok vydání: |
2020 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively and positively charged regions in DC biased sensors was revealed during 5 ms after switching bias. Using Monte Carlo simulations of current transients we determined enhanced electron lifetime {\tau} = 150 ns and electron drift mobility {\mu}d = 3650 cm2/Vs. We developed and successfully applied theoretical model based on fast hole trapping in the system with spatially variable hole conductivity. |
| Databáze: |
arXiv |
| Externí odkaz: |
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