Opto-electronic properties of alpha-In2Se3: single-layer to bulk
Autor: | Cho, Yujin, Anderson, Sean M., Mendoza, Bernardo S., Okano, Shun, Carriles, Ramon, Arzate, N., Shkrebtii, Anatoli I., Wu, Di, Lai, Keji, Zahn, D. R. T., Downer, M. C. |
---|---|
Rok vydání: | 2019 |
Předmět: | |
Druh dokumentu: | Working Paper |
DOI: | 10.1103/PhysRevMaterials.6.034006 |
Popis: | In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations. Comment: 10 pages, 7 figures |
Databáze: | arXiv |
Externí odkaz: |