| Autor: |
Wilson, Nathaniel S, Kraemer, Stephan, Pennachio, Daniel J., Callahan, Patrick, Pendharkar, Mihir, Palmstrøm, Christopher J |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Phys. Rev. Materials 4, 066003 (2020) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevMaterials.4.066003 |
| Popis: |
We report a novel growth mechanism that produces in-plane [1-10] oriented ErSb nanowires formed during codeposition of Er0.3Ga0.7Sb via molecular beam epitaxy (MBE). Nanowires are characterized by in-situ scanning tunneling microscopy (STM), as well as ex-situ transmission electron microscopy (TEM) and electron channeling contrast imaging (ECCI). We show that complexes of macrosteps with step heights on the order of 7 nm form during nanowire growth. The macrosteps are shown to be part of the in-plane nanowire growth process and are directly responsible for the observed stratified distribution of in-plane nanowires. TEM indicates that initial growth results in out-of-plane nanowires transitioning to in-plane nanowires after a critical film thickness. A surface energy model is put forward that shows the critical thickness is due to minimization of the GaSb{110} surfaces formed during out-of-plane nanowire growth. Kinetics of the transition are discussed with respect to observed features in STM, along with the material parameters needed to achieve in-plane nanowire growth. |
| Databáze: |
arXiv |
| Externí odkaz: |
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