| Autor: |
Li, Yangmu, Wu, Jie, Camino, Fernando, Gu, G. D., Božović, Ivan, Tranquada, John M. |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
Appl. Phys. Lett. 115, 173507 (2019) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/1.5122789 |
| Popis: |
Controllable geometric manipulation via micromachining techniques provides a promising tool for enhancing useful topological electrical responses relevant to future applications such as quantum information science. Here we present microdevices fabricated with focused ion beam from indium-doped topological insulator Pb1-xSnxTe. With device thickness on the order of 1 {\mu}m and an extremely large bulk resistivity, we achieve an unprecedented enhancement of the surface contribution to about 30% of the total conductance near room temperature. The surface contribution increases as the temperature is reduced, becoming dominant below approximately 180 K, compared to 30 K in mm-thickness crystals. In addition to the enhanced surface contribution to normal-state transport, we observe the emergence of a two-dimensional superconductivity below 6 K. Measurements of magnetoresistivity at high magnetic fields reveal a weak antilocalization behavior in the normal-state magnetoconductance at low temperature and a variation in the power-law dependence of resistivity on temperature with field. These results demonstrate that interesting electrical response relevant to practical applications can be achieved by suitable engineering of single crystals. |
| Databáze: |
arXiv |
| Externí odkaz: |
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