TCAD model for TeraFET detectors operating in a large dynamic range

Autor:	Liu, Xueqing, Shur, Michael S.
Rok vydání:	2019
Předmět:	Physics - Applied Physics Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
Popis:	We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analytical theory of the TeraFET detectors. The models incorporate the response saturation effect at high intensities of the THz radiation observed in experiments and reveal the physics of the response saturation associated with different mechanisms for different material systems. These mechanisms include the gate leakage, the velocity saturation and the avalanche effect. Comment: 5 pages, 9 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1908.04845 Zobrazit plný text záznamu View this record from Arxiv