| Autor: |
Peng, Boyu, Lau, Ho Yuen, Chen, Ming, Chan, Paddy K. L. |
| Rok vydání: |
2019 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
The contact resistance limits the down-scaling and operating range of OFETs. With the monolayer (1L) organic crystals and non-destructive metal/semiconductor interfaces, intrinsic mobility of 12.5 cm2V-1s-1 and Ohmic contact resistance of 40 ohm-cm were achieved. The on/off ratio maintained at 10^3 even at a small VDS of -0.1 mV. High current density of 4.2 uA/um was achieved with the 1L-crystal as the active layer. At such high current density, the velocity saturation and channel self-heating effects are observed in OFETs for the first time. In addition to the low contact resistance and high-resolution lithography, we suggest the thermal management of the high mobility OFETs will be the next major challenge to achieve high-speed densely integrated flexible electronics. |
| Databáze: |
arXiv |
| Externí odkaz: |
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