| Autor: |
Bablich, Andreas, Schneider, Daniel S., Kienitz, Paul, Kataria, Satender, Wagner, Stefan, Yim, Chanyoung, McEvoy, Niall, Engstrom, Olof, Müller, Julian, Sakalli, Yilmaz, Butz, Benjamin, Duesberg, Georg S., Bolívar, Peter Haring, Lemme, Max C. |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
ACS Photonics 6 (6), 1372-1378, 2019 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1021/acsphotonics.9b00337 |
| Popis: |
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS$_2$. This novel detector array exhibits long-term stability (more than six month) and outperforms conventional silicon-based pin photodetectors in the infrared range (IR, $\lambda$ = 2120 nm) in terms of sensitivities by up to 50 mAW$^{-1}$. Photodetectivities of up to 2 x 10$^{10}$ Jones and external quantum efficiencies of 3 % are achieved. The detectors further feature the additional functionality of bias-dependent responsivity switching between the different spectral ranges. The realization of such scalable detector arrays is an essential step towards pixelated and wavelength-selective sensors operating in the IR spectral range. |
| Databáze: |
arXiv |
| Externí odkaz: |
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