First-principles prediction of a new family of layered topological insulators
| Autor: | Li, Ping, Yu, Jiangying, Xu, Jinrong, Zhang, Li, Huang, Kai |
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| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Advanced Quantum Technologies 2 (9), 1900033 (2019) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1002/qute.201900033 |
| Popis: | Dozens of layered V$_2$IV$_2$VI$_6$ (V=P, As, Sb, Bi, IV=Si, Ge, Sn, Pb, VI=S, Se, Te) materials are investigated, several of which have been successfully synthesized in experiment. Among them, we predict nine strong topological insulators (TIs), two strong topological metals (TMs) and nearly twenty trivial insulators at their equilibrium structures. The TIs are in the (1;111) topological class, with energy gaps ranging from 0.04 to 0.2 eV. The strong TMs and the trivial insulators belong to the (1;111) and (0;000) topological classes, respectively. Small compressive strains easily turn some of the trivial insulators into strong TIs. This study enriches not only the family of topological materials but also the family of van der Waals layered materials, providing promising candidates for the future spintronic devices. Comment: 13 pages, 4 figures |
| Databáze: | arXiv |
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