Nature of carrier doping in T'-La1.8-xEu0.2SrxCuO4 studied by X-Ray Photoemission and Absorption Spectroscopy

Autor: Lin, Chun, Horio, Masafumi, Kawamata, Takayuki, Saito, Shin, Koshiishi, Keisuke, Sakamoto, Shoya, Zhang, Yujun, Yamamoto, Kohei, Ikeda, Keisuke, Hirata, Yasuyuki, Takubo, Kou, Wadati, Hiroki, Yasui, Akira, Takagi, Yasumasa, Ikenaga, Eiji, Adachi, Tadashi, Koike, Yoji, Fujimori, Atsushi
Rok vydání: 2019
Předmět:
Zdroj: J. Phys. Soc. Jpn., Vol.88, No.11, 2019
Druh dokumentu: Working Paper
DOI: 10.7566/JPSJ.88.115004
Popis: Recently, hole-doped superconducting cuprates with the T'-structure La1.8-xEu0.2SrxCuO4 (LESCO) have attracted a lot of attention. We have performed x-ray photoemission and absorption spectroscopy measurements on as-grown and reduced T0-LESCO. Results show that electrons and holes were doped by reduction annealing and Sr substitution, respectively. However, it is shown that the system remains on the electron-doped side of the Mott insulator or that the charge-transfer gap is collapsed in the parent compound.
Comment: 2 pages, 2 figures
Databáze: arXiv