| Autor: |
Jenichen, B, Hanke, M, Gaucher, S, Trampert, A, Herfort, J, Kirmse, H, Haas, B, Willinger, E, Huang, X, Erwin, S C |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Physical Review Materials 2, 051402(R) (2018) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevMaterials.2.052402 |
| Popis: |
Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron X-ray diffraction. The Ge(Fe,Si) films crystallize in the well oriented, layered tetragonal structure FeGe$_{2}$ with space group P4mm. This kind of structure does not exist as a bulk material and is stabilized by solid phase epitaxy of Ge on Fe$_{3}$Si. We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film. |
| Databáze: |
arXiv |
| Externí odkaz: |
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