| Autor: |
Scharf, C., Feindt, F., Klanner, R. |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research A 968 (2020) 163955 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1016/j.nima.2020.163955 |
| Popis: |
The absorption length, $\lambda_{abs}$, of light with wavelengths between 0.95 and 1.30$~\mu$m in silicon irradiated with 24$~$GeV/c protons to 1$~$MeV neutron equivalent fluences between 0 and $8.6 \times 10^{15}~$cm$^{-2}$ has been measured. It is found that $\lambda_{abs}$ decreases with fluence due to radiation-induced defects. A phenomenological parametrisation of the radiation-induced change of $\lambda_{abs}$ as a function of wavelength and neutron equivalent fluence at room temperature is given. The observation of the decrease of $\lambda_{abs}$ with irradiation is confirmed by edge-TCT measurements on irradiated silicon strip detectors. Using the measured wavelength dependence of $\lambda_{abs}$, the change of the silicon band-gap with fluence is determined. |
| Databáze: |
arXiv |
| Externí odkaz: |
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