Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass

Autor:	Sain, Twisha, Singh, Ch. Kishan, Ilango, S., Mathews, T.
Rok vydání:	2019
Předmět:	Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1063/1.5115539
Popis:	The present study reports Al induced crystallization (AIC) of amorphous (a)-SiGe in Al-Ge-Si ternary system at low temperature ~ 350 degree C. In addition to crystallization, the isothermal annealing of a-SiGe/AlOx/Al/corning-glass (CG) structure was found to be accompanied by an Al induced layer exchange (ALILE) phenomenon. The evolution of residual stress in the Al layer during isothermal annealing is evaluated using X-ray diffraction based technique to ascertain the role of stress in the ALILE process. A corroboration of the stress with the growth kinetics, analyzed using Avrami theory of phase transformation gives a comprehensive understanding of the ALILE crystallization process in this system. The grown polycrystalline SiGe thin film is a potential candidate for novel technological applications in semiconductor devices. Comment: 24 pages, 11 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1905.02986 Zobrazit plný text záznamu View this record from Arxiv