Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure
| Autor: | Müller, A., Şahin, C., Minhas, M. Z., Flatté, M. E., Schmidt, G. |
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| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Phys. Rev. Applied 11, 064026 (2019) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevApplied.11.064026 |
| Popis: | We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the current through a narrow channel of insulating $\mathrm{SrTiO_3}$ is controlled via an electrostatic side gate. Drain-source I/V-curves have been measured at low and elevated temperatures. The transistor shows strong electric-field and temperature-dependent behaviour with a steep sub-threshold slope %of up to as small as $10\:\mathrm{mV/decade}$ and a transconductance as high as $g_m\approx 22 \: \mathrm{\mu A/V}$. A fully consistent transport model for the drain-source tunneling reproduces the measured steep sub-threshold slope. Comment: 20 pages, 6 figures, Supplementary material: 4 pages, 2 figures |
| Databáze: | arXiv |
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