Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP
| Autor: | Besser, M., Reis, R. D. dos, Fan, F. -R., Ajeesh, M. O., Sun, Y., Schmidt, M., Felser, C., Nicklas, M. |
|---|---|
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Phys. Rev. Materials 3, 044201 (2019) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevMaterials.3.044201 |
| Popis: | We investigated the pressure evolution of the electrical transport in the almost compensated Weyl semimetal TaP. In addition, we obtained information on the modifications of the Fermi-surface topology with pressure from the analysis of pronounced Shubnikov-de Haas (SdH) quantum oscillations present in the Hall-effect and magnetoresistance data. The simultaneous analysis of the Hall and longitudinal conductivity data in a two-band model revealed an only weak decrease in the electron- and hole charge-carrier densities up to 1.2 GPa, while the mobilities are essentially pressure independent along the a-direction of the tetragonal crystal structure. Only weak changes in the SdH frequencies for B||a and B||c point at a robust Fermi-surface topology. In contrast to the stability of the Fermi-surface topology and of the density of charge carriers, our results evidence a strong pressure variation of the magnitude of transverse magnetoresistance for B||a contrary to the results for B||c. We can relate the former to an increase in the charge-carrier mobilities along the crystallographic c-direction. Comment: 6 pages, 5 figures |
| Databáze: | arXiv |
| Externí odkaz: |
|