High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures
| Autor: | Tchiomo, Arnaud P. Nono, Braun, Wolfgang, Doyle, Bryan P., Sigle, Wilfried, van Aken, Peter, Mannhart, Jochen, Ngabonziza, Prosper |
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| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | APL Materials 7, 041119 (2019) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.5094867 |
| Popis: | By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mobility of 140 cm$^2$ V$^{-1}\text{s}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations is only $4.9\times 10^{9}$ cm$^{-2}$ for buffered films prepared on (110) TbScO$_3$ substrates by pulsed laser deposition. Comment: 5 pages, 4 figures |
| Databáze: | arXiv |
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