Quantum-Hall to Insulator Transition in Ultra-low-carrier-density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

Autor:	Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung-Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber-Gordon, David, Oh, Seongshik
Rok vydání:	2019
Předmět:	Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Strongly Correlated Electrons
Zdroj:	Adv. Mater. 2019, 1901091
Druh dokumentu:	Working Paper
DOI:	10.1002/adma.201901091
Popis:	A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it has been challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Here, by developing ultra-low-carrier density topological insulator Sb$_2$Te$_3$ films, we were able to reach an extreme quantum limit of the topological surface state and uncover a hidden phase at the zeroth Landau level. First, we discovered an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level. Then, through a detailed scaling analysis, we found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in non-topological systems. Comment: 22 pages, 5 figures, Appendix (28 pages)
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1903.00489 Zobrazit plný text záznamu View this record from Arxiv