| Autor: |
Fleischmann, M., Gupta, R., Sharma, S., Shallcross, S. |
| Rok vydání: |
2019 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
The valence band edge in tiny angle twist bilayers of MoS$_2$ and phosphorene is shown to consist of highly localized energy levels created by a `moir\'e quantum well', i.e. trapped by the interlayer moir\'e potential. These approximately uniformly spaced energy levels exhibit a richly modulated charge density, becoming ultra-localized at the valence band maximum. The number and spacing of such levels is controllable by the twist angle and interlayer interaction strength, suggesting the possibility of `moir\'e engineering' ordered arrays of quantum dots in 2d twist semi-conductors. |
| Databáze: |
arXiv |
| Externí odkaz: |
|
