Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix

Autor:	Belolipetsky, A. V., Nestoklon, M. O., Yassievich, I. N.
Rok vydání:	2019
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
DOI:	10.1088/1361-648X/ab2963
Popis:	In the empirical tight-binding approach we study the electronic states in spherical SiGe nanocrystals embedded in SiO2 matrix. The energy and valley structure is obtained as a function of Ge composition and nanocrystal size. The calculations show that the mixing of hot electrons in the nanocrystal with electrons in wide band gap matrix is possible and this mixing strongly depends on the Ge composition in the nanocrystal. Comment: 5 pages, 5 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1901.04271 Zobrazit plný text záznamu View this record from Arxiv