Effects of Proton Irradiation on 60 GHz CMOS Transceiver Chip for Multi-Gbps Communication in High-Energy Physics Experiments
| Autor: | Aziz, Imran, Dancila, Dragos, Dittmeier, Sebastian, Siligaris, Alexandre, Dehos, Cedric, De Lurgio, Patrick M., Djurcic, Zelimir, Drake, Gary, Jimenez, Jose Luis G., Gustaffson, Leif, Kim, Do-Won, Locci, Elizabeth, Pfeiffer, Ulrich, Vazquez, Pedro Rodriquez, Röhrich, Dieter, Schöning, Andre, Soltveit, Hans K., Ullaland, Kjetil, Vincent, Pierre, Yang, Shiming, Brenner, Richard |
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| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | The Journal of Engineering, 2019 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1049/joe.2018.5402 |
| Popis: | This paper presents the experimental results of $17~MeV$ proton irradiation on a $60~GHz$ low power, half-duplex transceiver (TRX) chip implemented in $65~nm$ CMOS technology. It supports short range point-to-point data rate up to $6~Gbps$ by employing on-off keying (OOK). To investigate the irradiation hardness for high energy physics applications, two TRX chips were irradiated with total ionizing doses (TID) of $74~kGy$ and $42~kGy$ and fluence of $1.4~\times$10$^{14}~ N_{eq}/cm^2$ and $0.8~\times$10$^{14}~N_{eq}/cm^2$ for RX and TX modes, respectively. The chips were characterized by pre- and post-irradiation analogue voltage measurements on different circuit blocks as well as through the analysis of wireless transmission parameters like bit error rate (BER), eye diagram, jitter etc. Post-irradiation measurements have shown certain reduction in performance but both TRX chips have been found operational through over the air measurements at $5~Gbps$. Moreover, very small shift in the carrier frequency was observed after the irradiation. Comment: Accepted on 25th March 2019, 6 pages |
| Databáze: | arXiv |
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