| Autor: |
Lüpke, Felix, Doležal, Jiří, Cherepanov, Vasily, Ošt'ádal, Ivan, Tautz, F. Stefan, Voigtländer, Bert |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Surface Science 681, 130 (2019) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1016/j.susc.2018.11.016 |
| Popis: |
The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$\times$7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)$-$(7$\times$7) surface at room temperature results in an amorphous Te layer, increasing the substrate temperature to $770\rm\,K$ results in a weak (7$\times$7) electron diffraction pattern. Scanning tunneling microscopy of this surface shows remaining corner holes from the Si(111)$-$(7$\times$7) surface reconstruction and clusters in the faulted and unfaulted halves of the (7$\times$7) unit cells. Increasing the substrate temperature further to $920\rm\,K$ leads to a Te/Si(111)$-(2\sqrt3\times2\sqrt{3})\rm R30^{\circ}$ surface reconstruction. We find that this surface configuration has an atomically flat structure with threefold symmetry. |
| Databáze: |
arXiv |
| Externí odkaz: |
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