| Autor: |
Kriegel, Ilka, Borys, Nicholas J., Zhang, Kehao, Jansons, Adam W., Crockett, Brandon M., Koskela, Kristopher M., Barnard, Edward S., Penzo, Erika, Hutchison, James E., Robinson, Joshua A., Manna, Liberato, Schuck, P. James |
| Rok vydání: |
2018 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
The ultrathin nature of two-dimensional monolayer semiconductors yields optoelectronic properties which are highly responsive to changes in free-carrier density, making it imperative to masterfully control their doping levels. We report a new photo-doping scheme that quasi-permanently dopes the monolayer MoS2 to extents competing with electrostatic gating. The photo-doping is achieved by coupling monolayer MoS2 with indium tin oxide nanocrystals that can store multiple electrons per nanocrystal after UV illumination. In the hybrid structure, the photo-generated valence band holes in the nanocrystals are filled by MoS2 electrons, photo-doping the MoS2 with holes. Reductions in carrier density by ~6x10^12 cm^-2 are observed, equivalent to the storage of ~40 electrons per nanocrystal. Long-range changes proliferating up to 40 micrometers away from the localized photodoping result from local bandstructure variations in MoS2. These studies reveal novel all-optical carrier density control in monolayer semiconductors, enabling remote-control of local charge density and innovative energy storage technologies. |
| Databáze: |
arXiv |
| Externí odkaz: |
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