Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces
| Autor: | Chen, C. C., Chen, K. H. M., Fanchiang, Y. T., Tseng, C. C., Yang, S. R., Wu, C. N., Guo, M. X., Cheng, C. K., Wu, C. T., Hong, M., Kwo, J. |
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| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | Appl. Phys. Lett. 114, 031601 (2019) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.5054329 |
| Popis: | The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with a Se-buffered low-temperature (SBLT) growth technique. We demonstrated a streaky reflection high-energy electron diffraction pattern starting from the very first quintuple layer of Bi2Se3, indicating the high-quality interface between TmIG and Bi2Se3, a prerequisite for studying interfacial exchange coupling effects. The strong interfacial exchange interaction was manifested by observations of anomalous Hall effect in the Bi2Se3/TmIG bilayer and a shift of ferromagnetic resonance field of TmIG induced by Bi2Se3. We have reproducibly grown high-quality Bi2Se3/ReIG and interfaces using this new TI growth method, which may be applied to grow other types of van der Waals (vdW) hetero-structures. Comment: 17 pages, 4 figures |
| Databáze: | arXiv |
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