Induced quantum dot probe for material characterization
| Autor: | Shim, Yun-Pil, Ruskov, Rusko, Hurst, Hilary M., Tahan, Charles |
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| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | Applied Physics Letters 114, 152105 (2019) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.5053756 |
| Popis: | We propose a non-destructive means of characterizing a semiconductor wafer via measuring parameters of an induced quantum dot on the material system of interest with a separate probe chip that can also house the measurement circuitry. We show that a single wire can create the dot, determine if an electron is present, and be used to measure critical device parameters. Adding more wires enables more complicated (potentially multi-dot) systems and measurements. As one application for this concept we consider silicon metal-oxide-semiconductor and silicon/silicon-germanium quantum dot qubits relevant to quantum computing and show how to measure low-lying excited states (so-called "valley" states). This approach provides an alternative method for characterization of parameters that are critical for various semiconductor-based quantum dot devices without fabricating such devices. Comment: 5 pages, 3 figures |
| Databáze: | arXiv |
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