Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering
| Autor: | Passi, Vikram, Gahoi, Amit, Marin, Enrique G., Cusati, Teresa, Fortunelli, Alessandro, Iannaccone, Giuseppe, Fiori, Gianluca, Lemme, Max C. |
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| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | Advanced Materials Interfaces, 6(1): 1801285, 2019 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1002/admi.201801285 |
| Popis: | A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact. Specific contact resistivity is reduced from 1372 {\Omega}m for a device with surface contacts to 456 {\Omega}m when contacts are patterned with holes. Electrostatic doping of the graphene further reduces contact resistivity from 519 {\Omega}m to 45 {\Omega}m, a substantial decrease of 91%. The experimental results are supported and understood via a multi-scale numerical model, based on density-functional-theory calculations and transport simulations. The data is analyzed with regards to the edge perimeter and hole-to-graphene ratio, which provides insights into optimized contact geometries. The current work thus indicates a reliable and reproducible approach for fabricating low resistance contacts in graphene devices. We provide a simple guideline for contact design that can be exploited to guide graphene and 2D material contact engineering. Comment: 26 pages |
| Databáze: | arXiv |
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