Transport Measurements of Surface Electrons in 200 nm Deep Helium-Filled Microchannels Above Amorphous Metallic Electrodes
| Autor: | Asfaw, A. T., Kleinbaum, E. I., Henry, M. D., Shaner, E. A., Lyon, S. A. |
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| Rok vydání: | 2018 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1007/s10909-018-02139-6 |
| Popis: | We report transport measurements of electrons on helium in a microchannel device where the channels are 200 nm deep and 3 $\mu$m wide. The channels are fabricated above amorphous metallic Ta$_{40}$W$_{40}$Si$_{20}$, which has surface roughness below 1 nm and minimal variations in work function across the surface due to the absence of polycrystalline grains. We are able to set the electron density in the channels using a ground plane. We estimate a mobility of 300 cm$^2$/V$\cdot$s and electron densities as high as 2.56$\times$10$^9$ cm$^{-2}$. We demonstrate control of the transport using a barrier which enables pinchoff at a central microchannel connecting two reservoirs. The conductance through the central microchannel is measured to be 10 nS for an electron density of 1.58$\times$10$^9$ cm$^{-2}$. Our work extends transport measurements of surface electrons to thin helium films in microchannel devices above metallic substrates. Comment: 4 pages, 4 figures |
| Databáze: | arXiv |
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