Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis
| Autor: | Lorke, Michael, Michael, Stephan, Cepok, Marian, Jahnke, Frank |
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| Rok vydání: | 2018 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.5045860 |
| Popis: | Tunnel-injection lasers promise advantages in modulation bandwidth and temperature stability in comparison to conventional laser designs. In this paper, we present results of a microscopic theory for laser properties of tunnel-injection devices and a comparison to a conventional quantum-dot laser structure. In general, the modulation bandwidth of semiconductor lasers is affected by the steady-state occupations of electrons and holes via the presence of spectral hole burning. For tunnel-injection lasers with InGaAs quantum dot emitting at the telecom wavelength of 1,55$\mu$m, we demonstrate that the absence of spectral hole burning favors this concept over conventional quantum-dot based lasers. Comment: 5 pages, 4 figures |
| Databáze: | arXiv |
| Externí odkaz: |
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