| Autor: |
Mu, Sai, Samolyuk, G. D., Wimmer, S., Troparevsky, M. C., Khan, S., Mankovsky, S., Ebert, H., Stocks, G. M. |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
npj Computational Materials, 5, 1 (2019) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1038/s41524-018-0138-z |
| Popis: |
Whilst it has long been known that disorder profoundly affects transport properties, recent measurements on a series of solid solution 3d-transition metal alloys reveal two orders of magnitude variations in the residual resistivity. Using ab-initio methods, we demonstrate that, while the carrier density of all alloys is as high as in normal metals, the electron mean-free-path can vary from ~10 {\AA} (strong scattering limit) to ~10$^3$ {\AA} (weak scattering limit). Here, we delineate the underlying electron scattering mechanisms responsible for this disparate behavior. While spin dependent site-diagonal disorder is always dominant, for alloys containing only Fe, Co, and Ni the majority spin channel experiences negligible disorder scattering, thereby providing a short circuit, while for Cr/Mn containing alloys both spin channels experience strong disorder scattering due to an electron filling effect. Unexpectedly, other scattering mechanisms (e.g. displacement scattering) are found to be relatively weak in most cases. |
| Databáze: |
arXiv |
| Externí odkaz: |
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