| Autor: |
Ott, A. K., Dou, C., Sassi, U., Goykhman, I., Yoon, D., Wu, J., Lombardo, A., Ferrari, A. C. |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2d Materials 5, 045028 (2018) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1088/2053-1583/aad64b |
| Popis: |
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphene-based electrodes. Our devices show ON/OFF resistance ratios$\sim$4x$10^5$, ten times higher than with metal electrodes, with no increase in switching power, and low power density$\sim$14$\mu$W/$\mu$m$^2$. We attribute this to a suppressed tunneling current due to the low density of states of graphene near the Dirac point, consistent with the current-voltage characteristics derived from a quantum point contact model. Our devices also have multiple resistive states. This allows storing more than one bit per cell. This can be exploited in a range of signal processing/computing-type operations, such as implementing logic, providing synaptic and neuron-like mimics, and performing analogue signal processing in non-von-Neumann architectures |
| Databáze: |
arXiv |
| Externí odkaz: |
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