Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
| Autor: | Carvalho, Patricia Almeida, Thørgesen, Annett, Ma, Quanbao, Wright, Daniel Nielsen, Diplas, Spyros, Galeckas, Augustinas, Azarov, Alexander, Jokubavicius, Valdas, Sun, Jianwu, Syväjärvi, Mikael, Svensson, Bengt Gunnar, Løvvik, Ole Martin |
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| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | SciPost Phys. 5, 021 (2018) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.21468/SciPostPhys.5.3.021 |
| Popis: | Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K, while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B13C2 structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations E19 at.cm-3 were achieved at 1873 K. Comment: 18 pages, 10 figures |
| Databáze: | arXiv |
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