Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
| Autor: | Mazza, S. M., Estrada, E., Galloway, Z., Gee, C., Goto, A., Luce, Z., McKinney-Martinez, F., Rodriguez, R., Sadrozinski, H. F. -W., Seiden, A., Smithers, B., Zhao, Y., Cindro, V., Kramberger, G., Mandić, I., Mikuž, M., Arcidiacono, M. Zavrtanik R., Cartiglia, N., Ferrero, M., Mandurrino, M., Sola, V., Staiano, A., Boscardin, M., Della Betta, G. F., Ficorella, F., Pancheri, L., Paternoster, G. |
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| Rok vydání: | 2018 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1088/1748-0221/15/04/T04008 |
| Popis: | The properties of 60-{\mu}m thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Comment: arXiv admin note: text overlap with arXiv:1803.02690 |
| Databáze: | arXiv |
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