Effective g factor of 2D holes in strained Ge quantum wells
| Autor: | Drichko, I. L., Dmitriev, A. A., Malysh, V. A., Smirnov, I. Yu., von Känel, H., Kummer, M., Chrastina, D., Isella, G. |
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| Rok vydání: | 2018 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.5025413 |
| Popis: | The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 \times 10^{11}$~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured in perpendicular magnetic fields up to $8~\text{T}$ using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the $\mathrm{g}_{\perp}$-factor of each sample was determined. The $\mathrm{g}_{\perp}$-factor was found to be decreasing approximately linearly with hole density. This effect is attributed to non-parabolicity of the valence band. Comment: 4 pages, 5 figures |
| Databáze: | arXiv |
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