| Autor: |
Cuduvally, Ramya, Dhakras, Prathamesh, Nguyen, Phung, Hughes, Harold L., Lee, Ji Ung |
| Rok vydání: |
2018 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension to a ballistic model (J. Appl. Phys. 76, 4879 (1994)) and includes transmission probability and the drain-channel coupling capacitor. The latter parameter gives rise to a theoretical RON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices. |
| Databáze: |
arXiv |
| Externí odkaz: |
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